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DB3

HY ELECTRONIC

SILICON BIDIRECTIONAL DIACS


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DB3,DB4,DB6 SILICON BIDIRECTIONAL DIACS FEATURES ●Three way layer two terminal, axial lead , POWER DISSIPATION DO- 41 150 mW DO-35(GLASS) .020 TYP. (0.51) 1.083(27.5) MIN hermetically sealed diacs are designed specifically for triggering thyrisitors .The demonstrate low breakover current. The breakover symmetry is within three volts(DB3,DB4) or four volt...



HY ELECTRONIC

DB3

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