S9012

BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor FEATURES z z z High Collector Current.(IC= -500mA） Complementary To S9013. Excellent HFE Linearity. Production specification S9012 Pb Lead-free www.DataSheet4U.com APPLICATIONS z High Collector Current. SOT-23 ORDERING INFORMATION Type No. S9012 Marking 2T1 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value -40 -25 -5 -500 300 -55~150 Units V V V mA mW ℃ Document number: BL/SSSTC081 Rev.A www.galaxycn.com 1 BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage www.DataSheet4U.com Production specification S9012 MIN -40 -25 -5 -0.1 -0.1 -0.1 120 400 -0.6 -1.2 150 5 V V MHz pF ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Cob Test conditions IC=-100μA,IE=0 IC=-1mA,IB=0 B TYP MAX UNIT V V V μA μA μA IE=-100μA,IC=0 VCB=-40V,IE=0 VCE=-20V,IB=0 B Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VEB=-5V,IC=0 VCE=-1V,IC...