®
STW55NE10
N - CHANNEL 100V - 0.021Ω - 55A - TO247 STripFET™ POWER MOSFET
TYPE STW 55NE10
s s s s
V DSS 100 V
R DS(...
®
STW55NE10
N - CHANNEL 100V - 0.021Ω - 55A - TO247 STripFET™ POWER MOSFET
TYPE STW 55NE10
s s s s
V DSS 100 V
R DS(on) <0.027 Ω
ID 55 A
www.DataSheet4U.com s TYPICAL RDS(on)
= 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC APPLICATION ORIENTED CHARACTERIZATION
1 2
3
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM ( ) P tot Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor dv/dt ( 1) Peak Diode Recovery voltage slope Ts tg Tj Storage Temperature Max. Operating Junction Temperature
o o o
Value 100 100 ± 20 55 35 220 180 1.2 9 -65 to 175 175
( 1) ISD ≤ 55 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V A A A W W /o C V/ns
o o
C C
() Pulse width limited by safe operating area
Ja...