BD439

Transys Electronics L I M I T E D EPITAXIAL SILICON POWER TRANSISTORS BD433 BD435 BD437 BD439 BD441 NPN BD434 BD436 BD438 BD440 BD442 PNP EC B www.DataSheet4U.com TO126 Plastic Package Intended for use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Total Dissipation @ TC=25ºC Total Dissipation @ Ta=25ºC Derate above 25ºC Operating and Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 3.5 100 ºC/W ºC/W VCBO VCES VCEO VEBO IC IB PD PD BD433 BD434 22 22 22 BD435 BD436 32 32 32 BD437 BD438 45 45 45 5.0 4.0 7.0 1.0 36.0 1.25 10 - 65 to 150 BD439 BD440 60 60 60 BD441 BD442 80 80 80 UNIT V V V V A A A W W mW/ ºC ºC Collector Peak Current (t=10ms_ ICM Tj, Tstg ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) TEST CONDITION DESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 BD434 BD436 BD438 BD440 BD442 VCB=Rated VCBO, IE=0 ICBO Collector Cut off Current <100 <100 <100 <100 <100 Collector Cut off Current Emitter Cut off Current Collector Emitter Sustaining Voltage Collector Emitter Saturation Voltage Base Emitter On Voltage ICES IEBO *VCEO (sus) *VCE (sat) VBE=0, VCE=Rated VCES VEB=5V, IC=0 IC=100mA, IB=0 IC=2.0A, IB=0.2A <100 <1.0 >22 <0.5 <100 <1.0 >32 <0.5 <100 <1.0 >45 <0.6 typ 0.58 <1.1 <1.1 <1.2 <1.5 <1.5 <100 <1...