RDN120N25

RDN120N25 Transistors Switching (250V, 12A) RDN120N25 zFeatures 1) Low on-resistance. www.DataSheet4U.com 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. zExternal dimensions (Unit : mm) TO-220FN +0.3 10.0 − 0.1 0.3 4.5 + −0.1 3.2±0.2 2.8 −0.1 +0.2 0.4 15.0 + −0.2 12.0±0.2 zApplication Switching 5.0±0.2 8.0±0.2 1.2 1.3 14.0±0.5 0.8 zStructure Silicon N-channel MOS FET (1) Gate (2) Drain (3) Source 2.54±0.5 2.54±0.5 0.75 −0.05 +0.1 2.6±0.5 (1) (2) (3) zAbsolute maximum ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IDR IDRP ∗1 IAS ∗2 EAS ∗2 PD Tch Tstg Limits 250 ±30 12 48 12 48 12 216 40 150 −55 to +150 Unit V V A A A A A mJ W °C °C zEquivalent circuit Drain Gate Avalanche Current Avalanche Energy Total Power Dissipation (TC=25°C) Channel Temperature Storage Temperature ∗Gate Protection Diode Source ∗1 Pw ≤ 10µs, Duty cycle ≤ 1% ∗2 L 2.4mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. 1/4 RDN120N25 Transistors zElectrical characteristics (Ta=25°C) Parameter Gate-Source Leakage Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source On-State Res...