Document
SKW20N60HS
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High Speed IGBT in NPT-technology
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• 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • • • High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 20 Eoff 240µJ Tj Marking Package PG-TO-247-3-21
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PG-TO-247-3-21
Type SKW20N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C
150°C K20N60HS Symbol VCE IC
Value 600 36 20
Unit V A
Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage static transient (tp<1µs, D<0.05) Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s
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ICpul s IF
80 80
40 20 IFpul s VGE tSC Ptot Tj , Tstg Tj(tl) 80 ±20 ±30 10 178 -55...+150 175 260 V µs W °C
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.2 June 06
Power Semiconductors
SKW20N60HS
^ Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 20 A T j =2 5 ° C T j =1 5 0 ° C Diode forward voltage VF V G E = 0V , I F = 2 0 A T j =2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 50 0 µ A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 ° C T j =1 5 0 ° C Gate-emitter leakage current Transconductance IGES gfs V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 20 A 14 40 2500 100 nA S 3 1.5 1.5 4 2.0 2.0 5 µA 2.8 3.5 3.15 4.00 600 V Symbol Conditions Value min. Typ. max. Unit RthJA 40 RthJCD 1.7 RthJC 0.7 K/W Symbol Conditions Max. Value Unit
Power Semiconductors
2
Rev. 2.2
June 06
SKW20N60HS
^ Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
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Ciss Coss Crss QGate LE IC(SC)
V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 48 0 V, I C =2 0 A V G E = 15 V
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1100 150 64 100 13 170
pF
nC nH A
V G E = 15 V , t S C ≤ 10 µ s V C C ≤ 6 0 0 V, Tj ≤ 150°C
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Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =2 5 ° C , V R = 4 00 V , I F = 2 0 A, d i F / d t =1 1 00 A / µ s 130 15 115 730 16 540 nC A A/µs ns td(on) tr td(off) tf Eon Eoff Ets T j =2 5 ° C , V C C = 40 0 V, I C = 2 0 A, V G E = 0/ 15 V , R G = 16 Ω 2) L σ = 60 n H, 2) C σ = 40 pF Energy losses include “tail” and diode reverse recovery. 18 15 207 13 0.39 0.30 0.69 mJ ns Symbol Conditions Value min. typ. max. Unit
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Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L σ a nd Stray capacity C σ due to test circuit in Figure E. 3 Rev. 2.2 June 06
Power Semiconductors
SKW20N60HS
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Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =1 5 0 ° C V R = 4 00 V , I F = 2 0 A, d i F / d t =1 2 50 A / µ s 200 25 175 1500 21 410 nC A A/µs ns td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 ° C V C C = 40 0 V, I C = 2 0 A, V G E = 0/ 15 V , R G = 2 .2 Ω 1) L σ = 60 n H, 1) C σ = 40 pF Energy losses include “tail” and diode reverse recovery. T j =1 5 0 ° C V C C = 40 0 V, I C = 2 0 A, V G E = 0/ 15 V , RG= 16Ω 1) L σ = 60 n H,.