DatasheetsPDF.com

SKW20N60HS Dataheets PDF



Part Number SKW20N60HS
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description High Speed IGBT
Datasheet SKW20N60HS DatasheetSKW20N60HS Datasheet (PDF)

SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • • • High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spe.

  SKW20N60HS   SKW20N60HS



Document
SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • • • High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 20 Eoff 240µJ Tj Marking Package PG-TO-247-3-21 G E PG-TO-247-3-21 Type SKW20N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C 150°C K20N60HS Symbol VCE IC Value 600 36 20 Unit V A Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage static transient (tp<1µs, D<0.05) Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s 2) ICpul s IF 80 80 40 20 IFpul s VGE tSC Ptot Tj , Tstg Tj(tl) 80 ±20 ±30 10 178 -55...+150 175 260 V µs W °C VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.2 June 06 Power Semiconductors SKW20N60HS ^ Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 20 A T j =2 5 ° C T j =1 5 0 ° C Diode forward voltage VF V G E = 0V , I F = 2 0 A T j =2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 50 0 µ A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 ° C T j =1 5 0 ° C Gate-emitter leakage current Transconductance IGES gfs V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 20 A 14 40 2500 100 nA S 3 1.5 1.5 4 2.0 2.0 5 µA 2.8 3.5 3.15 4.00 600 V Symbol Conditions Value min. Typ. max. Unit RthJA 40 RthJCD 1.7 RthJC 0.7 K/W Symbol Conditions Max. Value Unit Power Semiconductors 2 Rev. 2.2 June 06 SKW20N60HS ^ Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) Ciss Coss Crss QGate LE IC(SC) V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 48 0 V, I C =2 0 A V G E = 15 V - 1100 150 64 100 13 170 pF nC nH A V G E = 15 V , t S C ≤ 10 µ s V C C ≤ 6 0 0 V, Tj ≤ 150°C - Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =2 5 ° C , V R = 4 00 V , I F = 2 0 A, d i F / d t =1 1 00 A / µ s 130 15 115 730 16 540 nC A A/µs ns td(on) tr td(off) tf Eon Eoff Ets T j =2 5 ° C , V C C = 40 0 V, I C = 2 0 A, V G E = 0/ 15 V , R G = 16 Ω 2) L σ = 60 n H, 2) C σ = 40 pF Energy losses include “tail” and diode reverse recovery. 18 15 207 13 0.39 0.30 0.69 mJ ns Symbol Conditions Value min. typ. max. Unit 1) 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L σ a nd Stray capacity C σ due to test circuit in Figure E. 3 Rev. 2.2 June 06 Power Semiconductors SKW20N60HS ^ Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =1 5 0 ° C V R = 4 00 V , I F = 2 0 A, d i F / d t =1 2 50 A / µ s 200 25 175 1500 21 410 nC A A/µs ns td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 ° C V C C = 40 0 V, I C = 2 0 A, V G E = 0/ 15 V , R G = 2 .2 Ω 1) L σ = 60 n H, 1) C σ = 40 pF Energy losses include “tail” and diode reverse recovery. T j =1 5 0 ° C V C C = 40 0 V, I C = 2 0 A, V G E = 0/ 15 V , RG= 16Ω 1) L σ = 60 n H,.


SKW20N60 SKW20N60HS SKW25N120


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)