TAN350

TAN 350 350 Watts, 50 Volts, Pulsed Avionics 960 – 1215 MHz GENERAL DESCRIPTION The TAN350 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. www.DataSheet4U.com ABSOLUTE CASE OUTLINE 55ST Style 1 MAXIMUM RATINGS W (At rated pulse condition) V V A °C °C Power Dissipation Device Dissipation @25°C (Pd) 1450 Voltage and Current Collector to Base Voltage (BVces ) 65 Emitter to Base Voltage (BVebo) 2.0 Collector Current (Ic ) 40 Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +230 ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL Pout Pin Pg ηc VSWR CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 960 – 1215 MHz VCC = 50 Volts PW = 10 µsec DF = 10% F = 1090 MHz MIN 350 70 7.0 38 3:1 7.5 40 TYP MAX UNITS W W dB % FUNCTIONAL CHARACTERISTICS @ 25°C BVebo BVces hFE θjc2 Emitter to Base Breakdown Collector to Emitter Breakdown DC – Current Gain Thermal Resistance Ie = 25 mA Ic = 50 mA Ic = 1A, Vce = 5V 2.0 65 10 .12 °C/W V V Rev A - Sept. 2005 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at ww...