www.DataSheet4U.com
IPB091N06N G
IPP091N06N G
OptiMOS® Power-Transistor
Features Low gate charge for fast switching applications N-channel enhancement - normal level 175 °C operating temperature Avalanche rated Pb-free lead plating, RoHS compliant
Product Summary V DS R DS(on),max ID
SMDversion
60 9.1 80
V mΩ A
Type
IPP091N06N G
IPB091N06N...
