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IPP070N06LG Dataheets PDF



Part Number IPP070N06LG
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPP070N06LG DatasheetIPP070N06LG Datasheet (PDF)

www.DataSheet4U.com IPB070N06L G IPP070N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version 60 7 80 V mΩ A Type IPB070N06L G IPP070N06L G Type IPB070N06L G Package IPP070N06L G Marking Package PG-TO263-3 PG-TO263-3 070N06L PG-TO220-3 Marking PG-TO220-3 070N06L 070N06L .

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www.DataSheet4U.com IPB070N06L G IPP070N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version 60 7 80 V mΩ A Type IPB070N06L G IPP070N06L G Type IPB070N06L G Package IPP070N06L G Marking Package PG-TO263-3 PG-TO263-3 070N06L PG-TO220-3 Marking PG-TO220-3 070N06L 070N06L 070N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 80 80 320 450 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C2) I D=80 A, R GS=25 Ω I D=80 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 214 -55 ... 175 55/175/56 Current is limited by bondwire; with an R thJC=0.7 K/W the chip is able to carry 114 A. See figure 3 Rev. 1.22 page 1 2006-04-07 www.DataSheet4U.com IPB070N06L G IPP070N06L G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=150 µA V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=60 V V GS=10 V, I D=80 A V GS=4.5 V, I D=53 A V GS=10 V, I D=80 A, SMD version V GS=4.5 V, I D=53 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=80 A 60 60 1.2 1.6 0.01 2 1 µA V 0.7 62 40 K/W Values typ. max. Unit - 1 100 - 10 5.8 7.1 5.5 100 7 10 6.7 nA mΩ 6.8 1.9 121 9.7 Ω S 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.22 page 2 2006-04-07 www.DataSheet4U.com IPB070N06L G IPP070N06L G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics4) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 4) Values typ. max. Unit C iss C oss C rss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=80 A, R G=2 Ω V GS=0 V, V DS=30 V, f =1 MHz - 3200 750 180 18 35 28 31 4300 1000 270 27 52 42 47 pF ns Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=30 V, V GS=0 V V DD=30 V, I D=80 A, V GS=0 to 10 V - 12 5 31 37 95 3.6 29 15 7 46 55 126 39 nC V IS I S,pulse V SD t rr Q rr T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=30 V, I F=I S, di F/dt =100 A/µs - 0.91 59 80 80 320 1.3 75 100 A V ns nC See figure 16 for gate charge parameter definition Rev. 1.22 page 3 2006-04-07 www.DataSheet4U.com IPB070N06L G IPP070N06L G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS≥10 V 250 90 80 200 70 60 150 P tot [W] I D [A] 100 50 0 0 50 100 150 200 50 40 30 20 10 0 0 50 100 150 200 T C [°C] T C [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 103 1 µs limited by on-state resistance 10 µs 100 µs 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 102 1 ms DC 10 ms 0.5 101 Z thJC [K/W] 0.2 I D [A] 10-1 0.1 0.05 0.02 100 0.01 single pulse 10-1 10 -1 10-2 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.22 page 4 2006-04-07 www.DataSheet4U.com IPB070N06L G IPP070N06L G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 240 5.5 V 5V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 15 10 V 3.5 V 4.5 V 4V 200 160 10 R DS(on) [mΩ ] I D [A] 4.5 V 5V 5.5 V 10 V 120 4V 80 3.5 V 5 40 0 0 1 2 3 0 0 0 40 80 120 160 200 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 160 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 160 120 120 80 g fs [S] 175 °C 25 °C I D [A] 80 40 40 0 0 1 2 3 4 5 0 0 20 40 60 80 V GS [V] I D [A] Rev. 1.22 page 5 2006-04-07 www.DataSheet4U.com IPB070N06L G IPP070N06L G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=80 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 20 3 2.5 15 2 R DS(on) [m.


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