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IPB070N06L G IPP070N06L G
OptiMOS® Power-Transistor
Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant
Product Summary V DS R DS(on),max ID
SMD version
60 7 80
V mΩ A
Type
IPB070N06L G
IPP070N06L G
Type IPB070N06L G Package IPP070N06L G Marking
Package PG-TO263-3 PG-TO263-3 070N06L PG-TO220-3
Marking PG-TO220-3 070N06L 070N06L 070N06L
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
1) 2)
Value 80 80 320 450 6 ±20
Unit A
I D,pulse E AS dv /dt V GS P tot T j, T stg
T C=25 °C2) I D=80 A, R GS=25 Ω I D=80 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C
mJ kV/µs V W °C
T C=25 °C
214 -55 ... 175 55/175/56
Current is limited by bondwire; with an R thJC=0.7 K/W the chip is able to carry 114 A. See figure 3
Rev. 1.22
page 1
2006-04-07
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IPB070N06L G IPP070N06L G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=150 µA V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=60 V V GS=10 V, I D=80 A V GS=4.5 V, I D=53 A V GS=10 V, I D=80 A, SMD version V GS=4.5 V, I D=53 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=80 A 60 60 1.2 1.6 0.01 2 1 µA V 0.7 62 40 K/W Values typ. max. Unit
-
1
100
-
10 5.8 7.1 5.5
100 7 10 6.7
nA mΩ
6.8 1.9 121
9.7 Ω S
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.22
page 2
2006-04-07
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IPB070N06L G IPP070N06L G
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics4) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge
4)
Values typ. max.
Unit
C iss C oss C rss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=80 A, R G=2 Ω V GS=0 V, V DS=30 V, f =1 MHz
-
3200 750 180 18 35 28 31
4300 1000 270 27 52 42 47
pF
ns
Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=30 V, V GS=0 V V DD=30 V, I D=80 A, V GS=0 to 10 V
-
12 5 31 37 95 3.6 29
15 7 46 55 126 39
nC
V
IS I S,pulse V SD t rr Q rr
T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=30 V, I F=I S, di F/dt =100 A/µs
-
0.91 59 80
80 320 1.3 75 100
A
V ns nC
See figure 16 for gate charge parameter definition
Rev. 1.22
page 3
2006-04-07
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IPB070N06L G IPP070N06L G
1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS≥10 V
250
90 80
200
70 60
150
P tot [W]
I D [A]
100 50 0 0 50 100 150 200
50 40 30 20 10 0 0 50 100 150 200
T C [°C]
T C [°C]
3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p
103
1 µs limited by on-state resistance 10 µs 100 µs
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
100
102
1 ms DC 10 ms
0.5
101
Z thJC [K/W]
0.2
I D [A]
10-1
0.1
0.05 0.02
100
0.01
single pulse
10-1 10
-1
10-2 10
0
10
1
10
2
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
Rev. 1.22
page 4
2006-04-07
www.DataSheet4U.com
IPB070N06L G IPP070N06L G
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
240
5.5 V 5V
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
15
10 V
3.5 V 4.5 V
4V
200
160
10
R DS(on) [mΩ ]
I D [A]
4.5 V 5V 5.5 V 10 V
120
4V
80
3.5 V
5
40
0 0 1 2 3
0 0
0
40
80
120
160
200
V DS [V]
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
160
8 Typ. forward transconductance g fs=f(I D); T j=25 °C
160
120
120
80
g fs [S]
175 °C 25 °C
I D [A]
80
40
40
0 0 1 2 3 4 5
0 0 20 40 60 80
V GS [V]
I D [A]
Rev. 1.22
page 5
2006-04-07
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IPB070N06L G IPP070N06L G
9 Drain-source on-state resistance R DS(on)=f(T j); I D=80 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D
20 3
2.5 15 2
R DS(on) [m.