DatasheetsPDF.com

IPP06CN10NG Dataheets PDF



Part Number IPP06CN10NG
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPP06CN10NG DatasheetIPP06CN10NG Datasheet (PDF)

www.DataSheet4U.com IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO263) ID 100 6.2 100 V mΩ A • Ideal for high-frequency switching and synchronous rectification Type IPB06CN10N G IPI06CN10N G IPP.

  IPP06CN10NG   IPP06CN10NG


Document
www.DataSheet4U.com IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO263) ID 100 6.2 100 V mΩ A • Ideal for high-frequency switching and synchronous rectification Type IPB06CN10N G IPI06CN10N G IPP06CN10N G Package Marking PG-TO263-3 06CN10N PG-TO262-3 06CN10N PG-TO220-3 06CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C I D=100 A, R GS=25 Ω I D=100 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C Value 100 88 400 480 6 ±20 214 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A Rev. 1.05 page 1 2006-06-02 www.DataSheet4U.com IPB06CN10N G IPI06CN10N G IPP06CN10N G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area5) 0.7 62 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=180 µA V DS=80 V, V GS=0 V, T j=25 °C V DS=80 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=100 A, TO220, TO262 V GS=10 V, I D=100 A, TO263 Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=100 A 100 2 3 0.1 4 1 µA V - 10 1 5.0 100 100 6.5 nA mΩ 67 4.7 1.6 134 6.2 Ω S 1) 2) J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=0.7 K/W the chip is able to carry 124 A. See figure 3 Tjmax=150 °C and duty cycle D=0.01 for V gs<-5V 3) 4) 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.05 page 2 2006-06-02 www.DataSheet4U.com IPB06CN10N G IPI06CN10N G IPP06CN10N G Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics6) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 6) C iss C oss C rss t d(on) tr t d(off) tf V DD=50 V, V GS=10 V, I D=50 A, R G=1.6 Ω V GS=0 V, V DS=50 V, f =1 MHz - 6920 1050 58 17 27 26 7 9200 1400 87 26 40 39 10 pF ns Q gs Q gd Q sw Qg V plateau Q oss V DD=50 V, V GS=0 V V DD=50 V, I D=100 A, V GS=0 to 10 V - 36 25 40 104 5.3 111 49 37 58 139 148 nC V nC IS I S,pulse V SD t rr Q rr T C=25 °C V GS=0 V, I F=100 A, T j=25 °C V R=50 V, I F=I S, di F/dt =100 A/µs - 1 110 295 100 400 1.2 A V ns - nC See figure 16 for gate charge parameter definition Rev. 1.05 page 3 2006-06-02 www.DataSheet4U.com IPB06CN10N G IPI06CN10N G IPP06CN10N G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS≥10 V 250 120 200 100 80 150 P tot [W] I D [A] 100 50 0 0 50 100 150 200 60 40 20 0 0 50 100 150 200 T C [°C] T C [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 103 1 µs 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 10 µs 0.5 102 100 µs 1 ms 10 ms 0.2 10 -1 0.1 0.05 0.02 0.01 single pulse 10 1 Z thJC [K/W] 10-2 10-3 2 DC I D [A] 100 10-1 10 -1 10 0 10 1 10 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.05 page 4 2006-06-02 www.DataSheet4U.com IPB06CN10N G IPI06CN10N G IPP06CN10N G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 400 8V 10 V 7V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 15 4.5 V 320 6.5 V 12 5V R DS(on) [mΩ ] 240 9 5.5 V I D [A] 6V 160 5.5 V 6 6V 10 V 80 5V 4.5 V 3 0 0 1 2 3 4 5 0 0 20 40 60 80 100 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 300 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 200 250 160 200 120 150 g fs [S] 80 175 °C 25 °C I D [A] 100 50 40 0 0 2 4 6 8 0 0 50 100 150 V GS [V] I D [A] Rev. 1.05 page 5 2006-06-02 www.DataSheet4U.com IPB06CN10N G IPI06CN10N G IPP06CN10N G 9 Drain-source on-state resistance R DS(on)=f(T j.


IPI06CN10NG IPP06CN10NG IPB06CNE8NG


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)