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IPB06CN10N G
IPI06CN10N G IPP06CN10N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max (TO263) ID 100 6.2 100 V mΩ A
• Ideal for high-frequency switching and synchronous rectification Type IPB06CN10N G IPI06CN10N G IPP06CN10N G
Package Marking
PG-TO263-3 06CN10N
PG-TO262-3 06CN10N
PG-TO220-3 06CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C I D=100 A, R GS=25 Ω I D=100 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C Value 100 88 400 480 6 ±20 214 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A
Rev. 1.05
page 1
2006-06-02
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IPB06CN10N G
IPI06CN10N G IPP06CN10N G
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area5) 0.7 62 40 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=180 µA V DS=80 V, V GS=0 V, T j=25 °C V DS=80 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=100 A, TO220, TO262 V GS=10 V, I D=100 A, TO263 Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=100 A 100 2 3 0.1 4 1 µA V
-
10 1 5.0
100 100 6.5 nA mΩ
67
4.7 1.6 134
6.2 Ω S
1) 2)
J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=0.7 K/W the chip is able to carry 124 A. See figure 3 Tjmax=150 °C and duty cycle D=0.01 for V gs<-5V
3) 4) 5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.05
page 2
2006-06-02
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IPB06CN10N G
IPI06CN10N G IPP06CN10N G
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics6) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge
6)
C iss C oss C rss t d(on) tr t d(off) tf V DD=50 V, V GS=10 V, I D=50 A, R G=1.6 Ω V GS=0 V, V DS=50 V, f =1 MHz
-
6920 1050 58 17 27 26 7
9200 1400 87 26 40 39 10
pF
ns
Q gs Q gd Q sw Qg V plateau Q oss V DD=50 V, V GS=0 V V DD=50 V, I D=100 A, V GS=0 to 10 V
-
36 25 40 104 5.3 111
49 37 58 139 148
nC
V nC
IS I S,pulse V SD t rr Q rr
T C=25 °C V GS=0 V, I F=100 A, T j=25 °C V R=50 V, I F=I S, di F/dt =100 A/µs
-
1 110 295
100 400 1.2
A
V ns
-
nC
See figure 16 for gate charge parameter definition
Rev. 1.05
page 3
2006-06-02
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IPB06CN10N G
IPI06CN10N G IPP06CN10N G
1 Power dissipation P tot=f(T C)
2 Drain current I D=f(T C); V GS≥10 V
250
120
200
100
80 150
P tot [W]
I D [A]
100 50 0 0 50 100 150 200
60
40
20
0 0 50 100 150 200
T C [°C]
T C [°C]
3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p
103
1 µs
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
100
10 µs
0.5
102
100 µs 1 ms 10 ms
0.2
10
-1
0.1 0.05 0.02 0.01 single pulse
10
1
Z thJC [K/W]
10-2 10-3
2
DC
I D [A]
100
10-1 10
-1
10
0
10
1
10
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
Rev. 1.05
page 4
2006-06-02
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IPB06CN10N G
IPI06CN10N G IPP06CN10N G
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
400
8V 10 V 7V
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
15
4.5 V
320
6.5 V
12
5V
R DS(on) [mΩ ]
240
9
5.5 V
I D [A]
6V
160
5.5 V
6
6V 10 V
80
5V 4.5 V
3
0 0 1 2 3 4 5
0 0 20 40 60 80 100
V DS [V]
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
300
8 Typ. forward transconductance g fs=f(I D); T j=25 °C
200
250 160 200 120 150
g fs [S]
80
175 °C 25 °C
I D [A]
100
50
40
0 0 2 4 6 8
0 0 50 100 150
V GS [V]
I D [A]
Rev. 1.05
page 5
2006-06-02
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IPB06CN10N G
IPI06CN10N G IPP06CN10N G
9 Drain-source on-state resistance R DS(on)=f(T j.