BF370R

www.DataSheet4U.com Transys Electronics L I M I T E D NPN SILICON PLANAR TRANSISTOR BF370R TO-92 BEC Low Level Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS DESCRIPTION VALUE VCBO 40 Collector -Base Voltage VCEO 15 Collector -Emitter Voltage VEBO 4.5 Emitter Base Voltage IC 100 Collector Current (Continuous) PD 500 Power Dissipation @ Ta=25 deg C 4.0 Derate Above 25 deg C Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range 260 Lead Temperature for Soldering 1/16" TL from Body for 10 Seconds. Thermal Resistance Rth (j-c) 83.3 Junction to Case Rth (j-a) 200 Junction to Ambient ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION VCBO IC=100uA, IE=0 Collector -Base Voltage VCEO IC=100uA, IB=0 Collector -Emitter Voltage VEBO IE=100uA, IC=0 Emitter Base Voltage ICBO VCB=20V, IE=0 Collector Cut off Current Ta=125 deg C VCB=15V, IE=0 IEBO VEB=2V, IC=0 Emitter Cut off Current hFE IC=10mA,VCE=1V DC Current Gain DYNAMIC CHARACTERISTICS ft IC=10mA,VCE=10V Transistors frequency IC=40mA,VCE=10V Cc VCB=10V, IE=0, f=1MHz Collector Capacitance Ce VEB=1V, IC= Ic=0, f=1MHz Emitter Capacitance Cre IC=0, VCE=10V, f=1MHz Feedback Capacitance GV V(int) RMS Interference Voltage for K=1% UNIT V V V mA mW mW/deg C deg C deg C deg C/W deg C/W MIN 40 15 4.5 40 TYP MAX 400 30 100 4.5 UNIT V V V nA uA nA 500 490 Typ 2.2 Typ 1.6 Typ 120 MHz MHz pF pF pF mV www.DataSheet4U.com TO-92 Plastic Package B TO-92 Transistors on Tape and...