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C5252

Hitachi Semiconductor

2SC5252

www.DataSheet4U.com 2SC5252 Silicon NPN Triple Diffused Planar ADE-208-391A (Z) 2nd. Edition Application Character di...


Hitachi Semiconductor

C5252

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www.DataSheet4U.com 2SC5252 Silicon NPN Triple Diffused Planar ADE-208-391A (Z) 2nd. Edition Application Character display horizontal deflection output Features High breakdown voltage VCBO = 1500 V High speed switching tf ≤ 0.15 µsec(typ.) Isolated package TO–3PFM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 www.DataSheet4U.com 2SC5252 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC* Tj Tstg 1 Ratings 1500 800 6 15 30 50 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 800 6 — 8 3 — — — Typ — — — — — — — 0.15 Max — — 500 35 6 5 1.5 0.3 V V µsec Unit V V µA Test conditions IC = 10 mA, RBE = ∞ IE = 10 mA, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 8 A IC = 10 A, IB = 3 A IC = 10 A, IB = 3 A ICP = 7 A, IB1 = 2 A, fH = 31.5 kHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time V(BR)EBO ICES hFE1 hFE2 VCE(sat) VBE(sat) tf 2 www.DataSheet4U.com 2SC5252 Collector Power Dissipation vs. Case Temperature Pc (W) Collector Power Dissipation 80 60 40 20 0 50 1...




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