ILD03N60

www.DataSheet4U.com ^ ILA03N60, ILP03N60 ILB03N60, ILD03N60 LightMOS Power Transistor C New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET Avalanche rated 150°C operating temperature FullPak isolates 2.5 kV AC (1 min.) P-TO-220-3-1 (TO-220AB) G E P-TO-220-3-31 (TO-220 FullPak) P-TO-263-3-2 (D2-PAK) (TO-263AB) P-TO-252-3-1 (D-PAK) (TO-252AA) Type ILA03N60 ILP03N60 ILB03N60 ILD03N60 Maximum Ratings Parameter VCE 600V 600V 600V 600V IC 3.0A 3.0A 3.0A 3.0A VCE(sat),Tj=25°C 2.9V 2.9V 2.9V 2.9V Tj,max 150°C 150°C 150°C 150°C Package P-TO-220-3-31 P-TO-220-3-1 P-TO-263-3-2 P-TO-252-3-1 Value ILA03N60 600 3 2.2 9 5.5 4 2.2 9 5.5 0.32 ±30 1 16.5 1 Ordering Code Q67040-S4626 Q67040-S4628 Q67040-S4627 Q67040-S4625 Symbol VCE TC = 25°C TC = 100°C IC ICpuls IF IFpuls EAS VGE dv/dt Ptot Tstg Ts Others 4.5 3 Unit V A Collector-emitter voltage DC collector current Pulsed collector current, tp limited by Tjmax, tp < 10 ms Pulsed collector current, tp limited by Tjmax Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax, tp < 10 ms Diode pulsed current, tp limited by Tjmax Avalanche energy, single pulse IC=0.4A, VCE=50V Gate-emitter voltage Reverse diode dv/dt IC ≤ 3A, VCE ≤ 450V, Tjmax ≤ 150°C Power dissipation (TC = 25°C) Operating junction and storage temperature Soldering temperature...