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CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
Spec. No. : C652F3 Issued Date : 2004.09...
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CYStech Electronics Corp.
NPN Epitaxial Planar
Transistor
Spec. No. : C652F3 Issued Date : 2004.09.07 Revised Date : Page No. : 1/4
BTC1510F3
Description
The BTC1510F3 is a
NPN Darlington
transistor, designed for general purpose amplifier and low speed switching application.
High BVCEO Low VCE(SAT) High current gain Monolithic construction with built-in base-emitter shunt resistors
Features:
Equivalent Circuit
BTC1510F3 C B
R1 8k R2 120
Outline
TO-263
B:Base C:Collector E:Emitter
E
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Note : *1. Single Pulse Pw=100ms
Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg
Limits 150 150 5 10 15 2 60 150 -55~+150
Unit V V V *1 A W °C °C
BTC1510F3
CYStek Product Specification
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CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO ICEO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) *VBE(on) 1 *VBE(on) 2 *VFEC *hFE 1 *hFE 2 Min. 150 150 2 100 Typ. Max. 200 200 2 2 3 1.5 2 2.8 4.5 3 20 Unit V V µA µA mA V V V V V V V K -
Spec. No. : C652F3 Issued Date : 2004.09.07 Revised Date : Page No. : 2/4
Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 VCE=150V, IE=0 VCB=150V, IE=0 VEB=5V, IC=0 IC=5A, IB=10mA IC=10A, IB=100mA IC=5A, IB=2.5mA IC=5A, IB=5mA VCE=3V, IC=5A VCE=3V, IC=10A IC=5A VCE=3V, IC=5A V...