Document
Data Sheet No. PD60032 rev P
IR2131(J)(S) & (PbF)
Features
3 HIGH SIDE AND 3 LOW SIDE DRIVER
• Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative
transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for all channels • Over-current shutdown turns off all six drivers • Independent 3 high side & 3 low side drivers • Matched propagation delay for all channels • 2.5V logic compatible
• Outputs out of phase with inputs
• 28-Lead SOIC & 44-Lead PLCC are also
Product Summary
VOFFSET
600V max.
IO+/-
160 mA / 360 mA
VOUT
10 - 20V
ton/off (typ.)
1.3 & 0.6 µs
available in Lead-Free.
Description
The IR2131(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V logic. A current trip function which termi-
Packages
28-Lead SOIC
nates all six outputs can be derived from an external current sense resistor. A shutdown input is provided for a customized shutdown function. An open drain FAULT signal is provided to indicate that any of the shutdowns has occurred. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduc-
28-Lead PDIP
44-Lead PLCC w/o 12 Leads
tion. Propagation delays are matched to simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high
side configuration which operate up to 600 volts.
Typical Connection
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
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1
IR2131(J)(S) & (PbF)
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Additional Information is shown in Figures 7 through 10.
Symbol
Definition
Min.
Max. Units
VB1,2,3 VS1,2,3 VHO1,2,3
VCC VSS VLO1,2,3 VIN
VFLT dVS/dt
PD
RthJA
TJ TS TL
High Side Floating Supply Voltage High Side Floating Offset Voltage High Side Floating Output Voltage Low Side and Logic Fixed Supply Voltage Logic Ground Low Side Output Voltage Logic Input Voltage (HIN1,2,3 ,LIN1,2,3 ,FLT - CLR ,SD &ITRIP)
FAULT Output Voltage Allowable Offset Supply Voltage Transient Package Power Dissipation @ TA ≤ +25°C
Thermal Resistance, Junction to Ambient
Junction Temperature Storage Temperature Lead Temperature (Soldering, 10 seconds)
(28 Lead DIP) (28 Lead SOIC) (44 Lead PLCC)
(28 Lead DIP) (28 Lead SOIC) (44 Lead PLCC)
-0.3 VB1,2,3 - 25 VS1,2,3 - 0.3
-0.3 VCC - 25
-0.3 VSS - 0.3
V.