DatasheetsPDF.com

10N60A

Advanced Power MOSFET

Description

www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) SSP10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 9 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolu...

Fairchild Semiconductor

Download 10N60A Datasheet

Similar Datasheet

10N60 N-Channel Power MOSFET - nELL
10N60 N-Channel Mosfet Transistor - Inchange Semiconductor
10N60 N-CHANNEL POWER MOSFET - Unisonic Technologies
10N60 N-CHANNEL MOSFET - CHONGQING PINGYANG
10N60-HC N-CHANNEL MOSFET - UTC
10N60-TC N-CHANNEL MOSFET - UTC
10N60A Advanced Power MOSFET - Fairchild Semiconductor
10N60B N-CHANNEL MOSFET - CHONGQING PINGYANG
10N60B 600V N-Channel MOSFET - Fairchild Semiconductor
10N60C 600V N-Channel MOSFET - Fairchild Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)