SSM3K15F

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15F SSM3K15F High Speed Switching Applications Analog Switch Applications Small package Low on resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Unit: mm +0.5 2.5-0.3 +0.25 1.5-0.15 +0.1 0.4-0.05 1 2 3 2.9±0.2 1.9 0.95 0.95 0.3 +0.1 0.16-0.06 Absolute Maximum Ratings (Ta = 25°C) +0.2 1.1-0.1 Characteristics Symbol Rating Unit 0~0.1 Drain-source voltage VDS 30 V Gate-source voltage Drain current DC Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature VGSS ID IDP PD Tch Tstg ±20 V 100 mA 200 200 mW 150 °C −55 to 150 °C S-MINI JEDEC JEITA 1.Gate 2.Source 3.Drain TO-236MOD SC-59 Note: Using continuously under heavy loads (e.g. the application of TOSHIBA 2-3F1F high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.012 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Equivalent Circuit 3 3 DP 1 2 1 2 Handling Precaution When handling individual devices ...