SSM3K107TU

www.DataSheet4U.com SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications 4 V drive Low ON-resistance: Unit: mm Ron = 410 mΩ (max) (@VGS = 4V) Ron = 200 mΩ (max) (@VGS = 10V) 0.65±0.05 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 3 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating 20 ± 20 1.5 3.0 800 500 150 −55~150 Unit V V A mW °C °C 2.0±0.1 1 2 0.7±0.05 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. 2 (25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm ) Note 2: Mounted on an FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Note: 1: Gate 2: Source 3: Drain UFM JEDEC JEITA TOSHIBA ― ― 2-2U1A Weight: 6.6 mg (typ.) Electrical Characterist...