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D2012 Dataheets PDF



Part Number D2012
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SD2012
Datasheet D2012 DatasheetD2012 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High power dissipation: PC = 25 W (Tc = 25°C) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature .

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High power dissipation: PC = 25 W (Tc = 25°C) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 60 60 7 3 0.5 2.0 25 150 −55 to 150 V V V A A W °C °C JEDEC JEITA ― ― Note 1: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-10R1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 1.7 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-01 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob VCB = 60 V, IE = 0 VEB = 7 V, IC = 0 IC = 50 mA, IB = 0 VCE = 5 V, IC = 0.5 A VCE = 5 V, IC = 2 A IC = 2 A, IB = 0.2 A VCE = 5 V, IC = 0.5 A VCE = 5 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Marking 2SD2012 Min Typ. Max Unit ― ― 100 μA ― ― 100 μA 60 ― ― V 100 ― 320 20 ― ― ― 0.4 1.0 V ― 0.75 1.0 V ― 3 ― MHz ― 35 ― pF D2012 Part No. (or abbreviation code) Lot No. Note 2 Note 2: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-12-01 Collector current IC (A) 3.0 100 90 2.5 2.0 1.5 1.0 IC – VCE 80 70 60 50 40 30 20 IB = 10 mA 0.5 Common emitter Tc = 25°C 0 01234567 Collector-emitter voltage VCE (V) DC current gain hFE 2SD2012 1000 500 Tc = 100°C 300 25 −25 100 50 30 hFE – IC Common emitter VCE = 5 V 10 0.01 0.03 0.05 0.1 0.3 0.5 1 Collector current IC (A) 3 Collector-emitter saturation voltage VCE (sat) (V) VCE (sat) – IC Common emitter 1 IC/IB = 10 0.5 0.3 0.1 0.05 0.03 Tc = 100°C −25 25 0.01 0.01 0.03 0.05 0.1 0.3 0.5 1 Collector current IC (A) 35 30 (1) 25 PC – Ta (1) Ta = Tc Infinite heat sink (2) No heat sink 20 15 10 5 (2) 0 0 25 50 75 100 125 150 175 Ambient temperature Ta (°C) Collector current IC (A) Collector current IC (A) IC – VBE 3.0 Common emitter 2.5 VCE = 5 V 2.0 1.5 1.0 Tc = 100°C 25 −25 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base-emitter voltage VBE (V) Safe Operating Area 10 IC max (pulsed)* 5 3 IC max (continuous) 1 ms* DC operation Tc = 25°C 1 10 ms* 100 ms* 0.5 *: Single nonrepetitive pulse 0.3 Tc = 25°C Curves must be derated linearly with increase in temperature. VCEO max 0.1 1 3 5 10 30 50 100 300 Collector-emitter voltage VCE (V) Collector power dissipation PC (W) 3 2009-12-01 Transient thermal resistance rth (°C/W) rth – tw 100 Curves apply only to limited areas of thermal 50 resistance. Single nonrepetitive pulse 30 (1) No heat sink Ta = 25°C (2) infinite heat sink Tc = 25°C 10 5 3 1 0.5 0.3 0.001 0.01 0.1 1 Pulse width tw (s) 2SD2012 (1) (2) 10 100 4 2009-12-01 2SD2012 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injur.


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