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11577-11 Dataheets PDF



Part Number 11577-11
Manufacturers Rockwell
Logo Rockwell
Description Digital Correlator
Datasheet 11577-11 Datasheet11577-11 Datasheet (PDF)

www.DataSheet4U.com Construction Analysis Rockwell 11577-11 Digital Correlator Report Number: SCA 9707-546 n Servi g the G lo b a e lS miconductor In d us try 17350 N. Hartford Drive Scottsdale, AZ 85255 Phone: 602-515-9780 Fax: 602-515-9781 e-mail: [email protected] Internet: http://www.ice-corp.com Since 1964 ® www.DataSheet4U.com INDEX TO TEXT TITLE INTRODUCTION MAJOR FINDINGS TECHNOLOGY DESCRIPTION Assembly Die Process ANALYSIS RESULTS I Assembly ANALYSIS RESULTS II Die Process an.

  11577-11   11577-11



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www.DataSheet4U.com Construction Analysis Rockwell 11577-11 Digital Correlator Report Number: SCA 9707-546 n Servi g the G lo b a e lS miconductor In d us try 17350 N. Hartford Drive Scottsdale, AZ 85255 Phone: 602-515-9780 Fax: 602-515-9781 e-mail: [email protected] Internet: http://www.ice-corp.com Since 1964 ® www.DataSheet4U.com INDEX TO TEXT TITLE INTRODUCTION MAJOR FINDINGS TECHNOLOGY DESCRIPTION Assembly Die Process ANALYSIS RESULTS I Assembly ANALYSIS RESULTS II Die Process and Design ANALYSIS PROCEDURE TABLES Overall Evaluation Package Markings Wirebond Strength Die Material Analysis Horizontal Dimensions Vertical Dimensions PAGE 1 1 2 2-3 4 5-7 8 9 10 10 10 11 12 -i- www.DataSheet4U.com INTRODUCTION This report describes a competitive analysis of the Rockwell 11577-11 digital correlator. One device packaged in a 144-pin Square Quad Flat Package (SQFP) was received for the analysis. The device was taken from a GPS receiver chipset manufactured by IST. The IC was date coded 9636. MAJOR FINDINGS Questionable Items:1 • Metal 2 aluminum thinned up to 100 percent2 at some locations of some vias. Barrier metal remained intact to provide continuity. • Metal 1 aluminum thinned up to 100 percent2 at some locations of some contacts. Barrier metal remained intact to provide continuity. Special Features: • Titanium silicided diffusion structures. 1These items present possible quality or reliability concerns. They should be discussed with the manufacturer to determine their possible impact on the intended application. depends on design margins. -1- 2Seriousness www.DataSheet4U.com TECHNOLOGY DESCRIPTION Assembly: • Device was encapsulated in a 144-pin plastic Square Quad Flat Package (SQFP). • Copper (Cu) leadframe was internally plated with silver (Ag). • External pins were tinned with tin-lead (SnPb) solder. • Lead-locking provisions (holes) at all pins. • Thermosonic ball bonding using 1.1 mil O.D. gold wire. • Pins 139 - 143 were not connected. • Sawn dicing (full-depth). • Silver-filled epoxy die attach. Die Process: • Fabrication process: Selective oxidation CMOS process employing P-wells in an Nepi on a P-substrate. • Final passivation: A layer of nitride over a layer of glass. • Metallization: Two levels of metal defined by standard dry-etch techniques. Both consisted of aluminum with a titanium-nitride cap and barrier. Standard vias and contacts were used (no plugs). • Interlevel dielectric: Interlevel dielectric consisted of two layers of silicon-dioxide with a planarizing spin-on-glass (SOG) between them. -2- www.DataSheet4U.com TECHNOLOGY DESCRIPTION (continued) • Polysilicon: A single layer of polycide (titanium silicide on poly) was used to form all gates on the die. Direct poly-to-diffusion (buried) contacts were not used. Definition was by a dry etch of normal quality. • Diffusions: Standard implanted N+ and P+ diffusions formed the sources/drains of the CMOS transistors. An LDD process was used with oxide s.


P2M648YL 11577-11 UXC20P


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