DATA SHEET
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SILICONTRANSISTOR
2SC3587
NPN EPITAXIAL SILICONTRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0. 5 to 6. 0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.
PACKAGE DIMENSIONS (in mm)
E
3. 8 MIN.
FEATURES
• Low noise : NF = 1. 7 dB TYP. @ f = 2 GHz
C
3. 8 MIN.
3. 8 MIN. B
NF = 2. 6 dB TYP. @ f = 4 GHz • High power gain : GA = 12. 5 dB TYP. @ f = 2 GHz GA = 8. 0 dB TYP. @ f = 4 GHz
3. 8 MIN.
45 °
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage ...