Dual N-Channel Enhancement Mode Power MOSFET
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SSM9960M/GM
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement Lower gate char...
Description
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SSM9960M/GM
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement Lower gate charge Fast switching characteristics
D2 D1 D1
D2
BV DSS R DS(ON)
G2 S2
40V 20mΩ 7.8A
ID
SO-8
S1
G1
Description
D1 D2
Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM9960M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters.
G1 S1
G2 S2
This device is available with Pb-free lead finish (second-level interconnect) as SSM9960GM.
Absolute Maximum Ratings
Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 40 ± 20 7.8 6.2 20 2 0.016 -55 to 150 -55 to 150
Units V V A A A W W/°C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit °C/W
8/21/2004 Rev.2.01
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SSM9960M/GM
Electrical Characteristics @ T j=25oC (unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. 40...
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