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G30N60C3D

Intersil Corporation
Part Number G30N60C3D
Manufacturer Intersil Corporation
Description N-Channel IGBT
Published Jan 28, 2008
Detailed Description www.DataSheet4U.com HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with ...
Datasheet PDF File G30N60C3D PDF File

G30N60C3D
G30N60C3D

Overview
www.
DataSheet4U.
com HGTG30N60C3D Data Sheet January 2000 File Number 4041.
2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49051.
The diode used in anti-parallel with the IGBT is the development type TA49053.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies wh...


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