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SF10J41A Dataheets PDF



Part Number SF10J41A
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description SILICON PLANAR TYPE THYRISTOR
Datasheet SF10J41A DatasheetSF10J41A Datasheet (PDF)

www.DataSheet4U.com SF10G41A,SF10J41A TOSHIBA THYRISTOR SILICON PLANAR TYPE SF10G41A,SF10J41A MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400,600V Repetitive Peak Reverse Voltage : VRRM = 400,600V l Average On−State Current l Gate Trigger Current : IT (AV) = 10A : IGT = 15mA (Max.) Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage Non−Repetitive Peak Reverse Voltage (Non-Repetitive<5ms, Tj = 0~125°C.

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www.DataSheet4U.com SF10G41A,SF10J41A TOSHIBA THYRISTOR SILICON PLANAR TYPE SF10G41A,SF10J41A MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400,600V Repetitive Peak Reverse Voltage : VRRM = 400,600V l Average On−State Current l Gate Trigger Current : IT (AV) = 10A : IGT = 15mA (Max.) Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage Non−Repetitive Peak Reverse Voltage (Non-Repetitive<5ms, Tj = 0~125°C) SF10G41A SF10J41A SF10G41A VRSM SF10J41A IT (AV) IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM VRGM IGM Tj Tstg 2 SYMBOL VDRM VRRM RATING 400 UNIT V 600 500 V 720 10 16 160 (50Hz) 176 (60Hz) 125 100 5 0.5 10 −5 2 −40~125 −40~125 A A A A s A / µs W W V V A °C °C 2 Average On−State Current (Half Sine Waveform Tc = 79°C) R.M.S On−State Current Peak One Cycle Surge On-State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On-State Curret Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 JEDEC JEITA TOSHIBA Weight: 2g TO−220AB SC−46 13−10G1B 1 2001-07-10 www.DataSheet4U.com SF10G41A,SF10J41A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current and Repetitive Peak Reverse Current Peak On−State Voltage Gate Trigger Voltage Gate Trigger Current Gate Non−Trigger Voltage Critical Rate of Rise of Off−State Voltage Holding Current Latching Current Thermal Resistance SYMBOL IDRM IRRM VTM VGT IGT VGD dv / dt IH IL Rth (j−c) TEST CONDITION VDRM = VRRM = Rated ITM = 30A VD = 6V, RL = 10Ω VD = Rated × 2 / 3, Tc = 125°C VDRM = Rated × 2 / 3, Tc = 125°C Exponential Rise VD = 6V, ITM = 1A VD = 6V, f = 50Hz, tgw = 50µS, iG = 30mA Junction to Case MIN ― ― ― ― 0.2 100 ― ― ― MAX 10 1.6 1.0 15 ― ― 40 60 2.0 UNIT µA V V mA V V / µs mA mA °C / W MARKING NUMBER *1 *2 SYMBOL SF10G41A TYPE SF10J41A SF10G41A, SF10J41A MARK SF10G41 SF10J41 A *3 Example 8A : January 1998 8B : February 1998 8L : December 1998 2 2001-07-10 www.DataSheet4U.com SF10G41A,SF10J41A 3 2001-07-10 www.DataSheet4U.com SF10G41A,SF10J41A 4 2001-07-10 www.DataSheet4U.com SF10G41A,SF10J41A 5 2001-07-10 www.DataSheet4U.com SF10G41A,SF10J41A RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within speci.


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