M58WR064HT

www.DataSheet4U.com M58WR064HT M58WR064HB 64 Mbit (4 Mb x16, multiple bank, burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2.24 V for I/O buffers – VPP = 12 V for fast program (optional) Synchronous/asynchronous read – Synchronous burst read mode: 66 MHz – Asynchronous/synchronous page read mode – Random access: 60 ns, 70 ns Synchronous burst read suspend Programming time – 8 µs by word typical for fast factory program – Double/quadruple word program option – Enhanced factory program options Memory blocks – Multiple bank memory array: 4 Mbit banks – Parameter blocks (top or bottom location) Dual operations – Program erase in one bank while read in others – No delay between read and write operations Block locking – All blocks locked at power-up – Any combination of blocks can be locked – WP for block lock-down Security – 128 bit user programmable OTP cells – 64 bit unique device number Common Flash interface (CFI) 100 000 program/erase cycles per block ■ FBGA ■ VFBGA56 (ZB) 7.7 x 9 mm ■ ■ ■ Electronic signature – Manufacturer code: 20h – Device codes: M58WR064HT (top): 8810h M58WR064HB (bottom): 8811h Package – ECOPACK® ■ ■ ■ ■ ■ ■ December 2007 Rev 3 1/110 www.st.com 1 www.DataSheet4U.com Contents M58WR064HT, M58WR064HB Contents 1 2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Signal descriptions . . . . . . . ...