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POWEREX
MITSUBISHI SEMICONDUCTOR <
TRANSISTOR ARRAY>
M54583P/FP
8-UNIT 400mA DARLINGTON
TRANSISTOR ARRAY
PIN CONFIGURATION (TOP VIEW)
DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington
transistor arrays. The circuits are made of
PNP and
NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
M54583P
IN1→ 1 IN2→ 2 IN3→ 3 INPUT IN4→ 4 IN5→ 5 IN6→ 6 18 →O1 17 →O2 16 →O3 15 →O4 14 →O5 13 →O6 12 →O7 11 →O8 10 VCC OUTPUT
FEATURES q High breakdown voltage (BVCEO ≥ 50V) q High-current driving (Ic(max) = 400mA) q Active L-level input q With input clamping diodes q Wide operating temperature range (Ta = –20 to +75 °C)
IN7→ 7 IN8→ 8 GND 9
Outline 18P4G
M54583FP
APPLICATION Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and printers, and MOS-bipolar logic IC interfaces
INPUT NC 1 20
NC
IN1→ 2 IN2→ 3 IN3→ 4 IN4→ 5 IN5→ 6 IN6→ 7
19 →O1 18 →O2 17 →O3 16 →O4 15 →O5 14 →O6 13 →O7 12 →O8
11
OUTPUT
FUNCTION The M54583 is produced by adding
PNP transistors to M54523 inputs. Eight circuits having active L-level inputs are provided. Resistance of 7kΩ and diode are provided in series between each input and
PNP transistor base. The input diode is intended to prevent the flow of current from the input to the V CC. Without this diode, the current flow from “H” input to the V CC and the “L” input circuits is a...
