TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2983
Power Amplifier Applications Driver Stage Amplifier ...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process)
2SC2983
Power Amplifier Applications Driver Stage Amplifier Applications
2SC2983
Unit: mm
High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1225
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
160
V
Collector-emitter voltage
VCEO
160
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1.5
A
Base current
IB
0.3
A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1.0 W
15
Junction temperature
Tj
150
°C
JEDEC
―
Storage temperature range
Tstg
−55 to 150
°C
JEITA
―
Note1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-7J1A
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-03-10
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown volt...
