www.DataSheet4U.com
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002 Lic# Q...
www.DataSheet4U.com
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002 Lic# QSC/L- 000019.2
NPN SILICON PLANAR
TRANSISTORS
CL 100, A, B CK 100, A, B TO-39 Metal Can Package
CL100 And CK 100 Are Medium Power
Transistors Suitable For Awide Range Of Medium Voltage And Current Amplifier Applications. Complementary CK100, A, B
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VCER Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current-Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Total device dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range VCBO VEBO ICM PD PD Tj, Tstg VALUE 50 60 5 1 800 5.33 3 20 -55 to +175 UNITS V V V A mW mW /°C W mW /°C °C
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage BVCER * IC =10mA, IB =0 Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Leakage Current Emitter Leakage Current DC Current Gain Base Emitter On Voltage Collector Emitter (Sat) Voltage CLASSIFICATION HFE BVCBO BVEBO ICBO IEBO hFE * IC =100µA, IE =0 IE=100µA, IC=0 VCB=40V, IE=0 VEB=4V, IE=0 IC=150mA,VCE=10V
MIN 50 60 5
TYP
MAX
UNIT V V V
50 1 40 300 0.9 0.6
nA µA V V
VBE(on)* VCE=1V, IC=150mA, VCE(sat)* IC=150mA,IB=15mA A 40-120 B 100-300
*Pulse Condition : PW <300us, Duty Cycle < 2%
Continental Device India Limite...