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D45128841G5 Dataheets PDF



Part Number D45128841G5
Manufacturers NEC
Logo NEC
Description UPD45128841G5
Datasheet D45128841G5 DatasheetD45128841G5 Datasheet (PDF)

www.DataSheet4U.com DATA SHEET MOS INTEGRATED CIRCUIT µPD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the posi.

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www.DataSheet4U.com DATA SHEET MOS INTEGRATED CIRCUIT µPD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL). These products are packaged in 54-pin TSOP (II). Features • Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge • Pulsed interface • Possible to assert random column address in every cycle • Quad internal banks controlled by BA0(A13) and BA1(A12) • Byte control (×16) by LDQM and UDQM • Programmable Wrap sequence (Sequential / Interleave) • Programmable burst length (1, 2, 4, 8 and full page) • Programmable /CAS latency (2 and 3) • Automatic precharge and controlled precharge • CBR (Auto) refresh and self refresh • ×4, ×8, ×16 organization • Single 3.3 V ± 0.3 V power supply • LVTTL compatible inputs and outputs • 4,096 refresh cycles / 64 ms • Burst termination by Burst stop command and Precharge command The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. M12650EJBV0DS00 (11th edition) Date Published April 2000 NS CP (K) Printed in Japan The mark • shows major revised points. © 1997 www.DataSheet4U.com µPD45128441, 45128841, 45128163 Ordering Information Part number Organization (word × bit × bank) 8M × 4 × 4 Clock frequency MHz (MAX.) 133 125 100 100 4M × 8 × 4 133 125 100 100 2M × 16 × 4 133 125 100 100 Package 54-pin Plastic TSOP (II) (10.16mm (400)) µPD45128441G5-A75-9JF µPD45128441G5-A80-9JF µPD45128441G5-A10-9JF µPD45128441G5-A10B-9JF µPD45128841G5-A75-9JF µPD45128841G5-A80-9JF µPD45128841G5-A10-9JF µPD45128841G5-A10B-9JF µPD45128163G5-A75-9JF µPD45128163G5-A80-9JF µPD45128163G5-A10-9JF µPD45128163G5-A10B-9JF 2 Data Sheet M12650EJBV0DS00 www.DataSheet4U.com µPD45128441, 45128841, 45128163 Part Number [ x4, x8 ] µPD45128841G5 - A75 NEC Memory Synchronous DRAM Memory density 128 : 128M bits Minimum cycle time 75 : 7.5 ns (133 MHz) 80 : 8 ns (125 MHz) 10 : 10 ns (100 MHz) 10B: 10 ns (100 MHz) Organization 4 : x4 8 : x8 Number of banks 4 : 4 banks Interface 1 : LVTTL Low voltage A : 3.3 V ± 0.3 V Package [ x16 ] Organization 16 : x16 Number of banks and Interface 3 : 4 banks, LVTTL 163 G5 : TSOP (II) Data Sheet M12650EJBV0DS00 3 www.DataSheet4U.com µPD45128441, 45128841, 45128163 Pin Configurations /xxx indicates active low signal. [µPD45128441] 54-pin Plastic TSO.


TLZ10 D45128841G5 CM6516


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