MSB1218A-RT1

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MSB1218A–RT1/D PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC–70/SOT–323 package which is designed for low power surface mount applications. High hFE, 210 – 460 Low VCE(sat), < 0.5 V Available in 8 mm, 7–inch/3000 Unit Tape and Reel COLLECTOR 3 MSB1218A-RT1 MSB1218A-ST1 Motorola Preferred Devices PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT 1 BASE 2 EMITTER 1 3 MAXIMUM RATINGS (TA = 25°C) Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value 45 45 7.0 100 200 Unit Vdc Vdc Vdc mAdc mAdc 2 CASE 419–02, STYLE 3 SC–70/SOT–323 DEVICE MARKING MSB1218A–RT1 = BR MSB1218A–ST1 = BS THERMAL CHARACTERISTICS Rating Power Dissipation(1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 150 150 – 55 ~ + 150 Unit mW °C °C ELECTRICAL CHARACTERISTICS Characteristic Collector–Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 10 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 µAdc, IE = 0) Collector–Base Cutoff Current (VCB = 20 Vdc, IE = 0) Collector–Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) DC Current Gain(2) (VCE = 10 Vdc, IC = 2.0 mAdc) Collector–Emitter S...