Flash Memory
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K8A5615ET(B)A
FLASH MEMORY
Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR F...
Description
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K8A5615ET(B)A
FLASH MEMORY
Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History
Revision No. History
0.0 0.1 Advanced Revision - Change the speed code 7B : 90ns @54MHz ---> 7B : 88.5ns @54MHz Revision - Change the device version ID Top boot device : 22ECH --> 22FCH Bottom boot device : 22EDH --> 22FDH - Not support accelerated quad word program operation Revision - Change the initial access time of asynchronous read mode K8A56156ET(B)A-DE7C tAA : 70ns--->80ns tCE : 70ns--->80ns - Support accelerated quad word program operation Revision - Add the operation flow chart Revision - Add the description of range limitation of data read out during program suspend.(Refer to "Program Suspend/Resume" paragragh)
Draft Date
March 15, 2004 June 1, 2004
Remark
Advance Preliminary
0.2
July 5, 2004
Preliminary
0.3
August 3, 2004
Preliminary
0.4
August 23, 2004
Preliminary
0.5
September 6, 2004 Preliminary
0.6
Revision December 13, 2004 Preliminary - Add the requirement and note of Quadruple word program operation Specification finalized December 16, 2004
1.0
1
Revision 1.0 December, 2004
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K8A5615ET(B)A
FLASH MEMORY
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory
FEATURES
Single Voltage, 1.7V to 1.95V for Read and Write operations Organization - 16,772,216 x 16 bit ( Word Mode Only) Read While Program/Erase Operation Multiple Bank Architecture - 16 Banks (16M...
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