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1Gb: x8, x16 NAND Flash Memory Features
1Gb NAND Flash Memory
MT29F1GxxABB
For the latest data sheet, refer to Micron's Web site: www.micron.com/datasheets
Features
• Organization • Page size x8: 2,112 bytes (2,048 + 64 bytes) • Page size x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes) • Device size: 1Gb: 1,024 blocks • READ performance • Random READ: 25µs (MAX) • Sequential READ: 50ns (MIN) • WRITE performance • PROGRAM PAGE: 300µs (TYP) • BLOCK ERASE: 2.0ms (TYP) • Endurance: 100,000 PROGRAM/ERASE cycles • Data retention: 10 years • The first block (block address 00h) is guaranteed to be valid without ECC (up to 1,000 PROGRAM/ERASE cycles). • VCC: 1.65V–1.95V • Automated PROGRAM and ERASE • Basic NAND Flash command set • PAGE READ, RANDOM DATA READ, READ ID, READ STATUS, PROGRAM PAGE, RANDOM DATA INPUT, PROGRAM PAGE CACHE MODE, INTERNAL DATA MOVE, INTERNAL DATA MOVE with RANDOM DATA INPUT, BLOCK ERASE, RESET • New commands • PAGE READ CACHE MODE • READ ID2 (contact factory) • READ UNIQUE ID (contact factory) • Programmable I/O • OTP • BLOCK LOCK • Operation status byte: Provides a software method for detecting: • Operation completion • Pass/fail condition • Write-protect status • Ready/busy# pin (R/B#) • Provides a hardware method of detecting operation completion • LOCK signal: Protects selectable ranges of blocks • WP# signal: Write-protects the entire device
PDF: 09005aef81dc05df / Source: 09005aef821d5f08 1gb_nand_m48a__1.fm - Rev. 2.0 6/06 EN
Figure 1:
63-Ball VFBGA x8
Options1
• Configuration • x8 • x16 • Package • 63-ball VFBGA 13mm x 10.5mm x 1.0mm • Operating temperature • Commercial temperature (0 to +70°C) • Extended temperature (–40°C to +85°C) Notes: 1. For part numbers and device markings, see Figure 2 on page 2.
1
Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved.
‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.
Draft 6/ 28/ 2006
www.DataSheet4U.com
Micron Confidential and Proprietary
Advance
1Gb: x8, x16 NAND Flash Memory Part Numbering Information
Part Numbering Information
Micron NAND Flash devices are available in several different configurations and densities (see Figure 2). Figure 2: Part Number Chart
MT 29F 1G Micron Technology Product Family
29F = Single-Supply NAND Flash Memory
08
A
B
B
HC xx
xx
xx
ES
:B
Die Revision
B = Second genertion
Density
1G = 1Gb
Production Status
Blank = Production ES = Engineering Sample QS = Qualification Sample
Device Width
08 = 8 bits 16 = 16 bits
Operating Temperature Range
Blank = Commercial (0°C to +70°C) ET = Extended (–40° to +85°C)
# of die # of CE# # of R/B# I/O
A
1
1
1
Commo.