BMT1417B26

www.DataSheet4U.com BIPOLARICS, INC Part Number BMT1417B26 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: Common Base, Class C Package Configuration High Output Power 26 W @ 1.4 to 1.7 GHz High Gain Bandwidth Product f = 6.0 GHz @ IC = 4.16 A t High Gain GPE = 7.0 dB to 8.2 dB High Reliability Gold Metallization Nitride Passivation Diffused Ballast Resistors BeO Packaging Built-In Matching Network Absolute Maximum Ratings: SYMBOL PARAMETERS RATING UNITS VCBO VCEO VEBO IC T J Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (instantaneous) Junction Temperature Storage Temperature Thermal Resistance 50 28 3.5 4.16 200 -65 to 200 6.5 V V V A o o for Broadband Operation PERFORMANCE DATA: Electrical Characteristics (TA = 25oC) SYMBOL PARAMETERS & CONDITIONS VCE =28V, I C =4.16 A, Class C C TSTG C θJC C/W UNIT MIN. TYP. MAX. P1dB Power output at 1 dB compression: f = 1.4 GHz W 26 η hFE Collector Efficiency Class C % 50 Forward Current Transfer Ratio: VCB = 5V, IC = 800 mA 10 --- 100 COB Output Capacitance: f = 1 MHz, I E = 0 pF 24 PT Total Power Dissipation W 52 www.DataSheet4U.com PAGE 2 BIPOLARICS, INC. Part Number BMT1417B26 SILICON MICROWAVE POWER TRANSISTOR www.DataSheet4U.com PAGE 3 BIPOLARICS, INC. Part Number BMT1417B26 SILICON MICROWAVE POWER TRANSISTOR www.DataSheet4U.com PAGE 4 BIPOLARICS, INC. Part Number BMT1417B26 SILICON MICROWAVE POWER ...