AO3401A

www.DataSheet4U.com AO3401A P-Channel Enhancement Mode Field Effect Transistor General Description The AO3401A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. Standard product AO3401A is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = -30V (V GS = -10V) ID = -4.3A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 55mΩ (VGS = -4.5V) RDS(ON) < 80mW (V GS = -2.5V) Rg,Ciss,Coss,Crss Tested TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain A,F Current Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TA=25°C TA=70°C ID IDM PD TJ, TSTG Maximum -30 ±12 -4.3 -3.8 -25 1.4 0.9 -55 to 150 Units V V A W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 65 85 43 Max 90 125 80 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3401A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-4.3A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=...