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STK4332

Sanyo Semicon Device

AF Power Amplifier

Ordering number: EN 1227C www.DataSheet4U.com Thick Film Hybrid IC STK4332 AF Power Amplifier (5W + 5W min, THD = 1.0%)...


Sanyo Semicon Device

STK4332

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Description
Ordering number: EN 1227C www.DataSheet4U.com Thick Film Hybrid IC STK4332 AF Power Amplifier (5W + 5W min, THD = 1.0%) Features Small and slim package with 25.5 mm height. Capable of guaranteeing substrate temperature 125°C, thereby reducing heat sink. Excellent cost performance. Package Dimensions unit: mm 4032 [STK4332] Specifications Maximum Ratings at Ta = 25°C Parameter Maximum supply voltage Thermal resistance Junction temperature Operating substrate temperature Storage temperature Available time for load short-circuit Symbol VCC max θj-c Tj Tc Tstg ts VCC = 23V, RL = 8Ω, PO = 5W, f = 50Hz Pin 4 to 7, 12 One power transistor Conditions Ratings 32 7 150 125 −30 to +125 2 Unit V °C/W °C °C °C s Recommended Operating Conditions at Ta = 25°C Parameter Recommended supply voltage Load resistance Symbol VCC RL Conditions Ratings 23 8 Unit V Ω SANYO Electric Co., Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 61197HA (ID) / 8058MO 2033KI, TS No. 1227—1/6 www.DataSheet4U.com STK4332 Operating Characteristics at Ta = 25°C, VCC = 23V, RL = 8Ω, Rg = 600Ω, VG = 40 dB, at specified Test Circuit (based on Sample Application Circuit). Parameter Quiescent current Output power PO (2) Total harmonic distortion Frequency response Input impedance Output noise voltage THD fL, fH ri VNO Symbol ICCO PO (1) Conditions VCC = 27V THD = 1.0%, f = 1kHz THD = 1.0%, f = 60Hz to 10kHz PO = 0.1W, f = 1kHz PO = 0.1W, +0 dB...




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