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MP4411 Dataheets PDF



Part Number MP4411
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel Power MOSFET
Datasheet MP4411 DatasheetMP4411 Datasheet (PDF)

www.DataSheet4U.com MP4411 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV in One) MP4411 High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver Industrial Applications Unit: mm • • • • • • • 4-V gate drivability Small package by full molding (SIP 12 pin) High drain power dissipation (4-device operation) : PT = 28 W (Tc = 25°C) Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.) High forward transfer .

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www.DataSheet4U.com MP4411 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV in One) MP4411 High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver Industrial Applications Unit: mm • • • • • • • 4-V gate drivability Small package by full molding (SIP 12 pin) High drain power dissipation (4-device operation) : PT = 28 W (Tc = 25°C) Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = 100 µA (max) (VDS = 100 V) Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation (1-device operation, Ta = 25°C) Drain power dissipation Ta = 25°C (4-device operation) Tc = 25°C DC Pulse Symbol VDSS VDGR VGSS ID IDP PD Rating 100 100 ±20 3 12 2.2 4.4 28 140 3 0.22 mJ EART Tch Tstg 0.44 150 −55 to 150 °C °C Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-32C1D Weight: 3.9 g (typ.) W PDT EAS IAR EAR W mJ A Single pulse avalanche energy (Note 1) Avalanche current 1 device operation Repetitive avalanche energy (Note 2) 4 devices operation Channel temperature Storage temperature range Note 1: Condition for avalanche energy (single pulse) measurement VDD = 50 V, starting Tch = 25°C, L = 20 mH, RG = 25 Ω, IAR = 3 A Note 2: Repetitive rating; pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-01 www.DataSheet4U.com Array Configuration MP4411 Thermal Characteristics 2 3 5 4 1 6 9 10 12 11 8 7 Characteristics Thermal resistance from channel to ambient (4-device operation, Ta = 25°C) Thermal resistance from channel to case (4-device operation, Tc = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for t = 10 s) TL 260 °C ΣRth (ch-c) 4.46 °C/W Symbol Max Unit ΣRth (ch-a) 28.4 °C/W Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf VGS 0V 10 V ID = 2 A RL = 25 Ω VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 2 A VGS = 10 V, ID = 2 A VDS = 10 V, ID = 2 A Min ― ― 100 0.8 ― ― 1.5 ― ― ― ― VOUT ― 50 ― ns ― 40 ― Typ. ― ― ― ― 0.36 0.28 3.5 280 50 105 20 Max ±10 100 ― 2.0 0.45 0.35 ― ― ― ― ― Unit µA µA V V Ω S pF pF pF Turn-on time Switching time Fall time 50 Ω VDD ≈ 50 V VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 µs ― 170 ― Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge toff Qg Qgs Qgd VDD ≈ 80 V, VGS = 10 V, ID = 3 A ― ― ― 13.5 8.5 5 ― ― ― nC nC nC 2 2004-07-01 www.DataSheet4U.com MP4411 Source-Drain Diode Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current Pulse drain reverse current Diode forward voltage Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition ― ― IDR = 3 A, VGS = 0 V IDR = 3 A, VGS = 0 V, dIDR/dt = 50 A/µs Min ― ― ― ― ― Typ. ― ― ― 100 0.2 Max 3 12 −1.5 ― ― Unit A A V ns µC Flyback-Diode Rating and Characteristics (Ta = 25°C) Characteristics Forward current Reverse current Reverse voltage Forward voltage Symbol IFM IR VR VF VR = 100 V IR = 100 µA IF = 0.5 A Test Condition ― Min ― ― 100 ― Typ. ― ― ― ― Max 3 0.4 ― 1.8 Unit A µA V V Marking MP4411 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 3 2004-07-01 www.DataSheet4U.com MP4411 ID – VDS 2.0 Common source Tc = 25°C 1.6 8 6 4 3 10 8 10 8 6 ID – VDS Common source Tc = 25°C (A) 2.8 1.2 2.6 0.8 2.4 0.4 VGS = 2.2 V (A) 10 ID ID 4 6 Drain current Drain current 4 3.5 3 2 VGS = 2.5 V 0 0 0.2 0.4 0.6 0.8 1.0 0 0 2 4 6 8 10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 5 Common source 4 VDS = 10 V 3.2 VDS – VGS Common source (V) Tc = 25°C 2.4 (A) ID Drain-source voltage 3 Drain current VDS 1.6 ID = 5 A 3 0.8 1.5 2 25 1 100 Ta = −55°C ) 0 0 1 2 3 4 5 0 0 0.8 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID 10 Common source 3 Common source Ta = −55°C 100 25 1 RDS (ON) – ID Forward transfer admittance |Yfs| (S) 5 3 Drain-source on resistance RDS(ON) (Ω) VDS = 10 V Tc = 25°C 1 0.5 0.3 VGS = 4 V 10 0.5 0.3 0.1 0.3 0.5 1 3 5 10 0.1 0.1 0.3 0.5 1 3 5 10 Drain current ID (A) Drain current ID (A) 4 2004-07-01 www.DataSheet4U.com MP4411 RDS (ON) – Tc RD.


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