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MP4411
TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV in One)
MP4411
High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
Industrial Applications Unit: mm
• • • • • • •
4-V gate drivability Small package by full molding (SIP 12 pin) High drain power dissipation (4-device operation) : PT = 28 W (Tc = 25°C) Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = 100 µA (max) (VDS = 100 V) Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation (1-device operation, Ta = 25°C) Drain power dissipation Ta = 25°C (4-device operation) Tc = 25°C DC Pulse Symbol VDSS VDGR VGSS ID IDP PD Rating 100 100 ±20 3 12 2.2 4.4 28 140 3 0.22 mJ EART Tch Tstg 0.44 150 −55 to 150 °C °C Unit V V V A
JEDEC JEITA TOSHIBA
― ― 2-32C1D
Weight: 3.9 g (typ.)
W
PDT EAS IAR EAR
W mJ A
Single pulse avalanche energy (Note 1) Avalanche current 1 device operation Repetitive avalanche energy (Note 2) 4 devices operation Channel temperature Storage temperature range
Note 1: Condition for avalanche energy (single pulse) measurement VDD = 50 V, starting Tch = 25°C, L = 20 mH, RG = 25 Ω, IAR = 3 A Note 2: Repetitive rating; pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
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Array Configuration
MP4411
Thermal Characteristics
2 3 5 4
1 6 9
10 12
11
8
7 Characteristics Thermal resistance from channel to ambient (4-device operation, Ta = 25°C) Thermal resistance from channel to case (4-device operation, Tc = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for t = 10 s) TL 260 °C ΣRth (ch-c) 4.46 °C/W Symbol Max Unit
ΣRth (ch-a)
28.4
°C/W
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf VGS 0V 10 V ID = 2 A RL = 25 Ω VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 2 A VGS = 10 V, ID = 2 A VDS = 10 V, ID = 2 A Min ― ― 100 0.8 ― ― 1.5 ― ― ― ― VOUT ― 50 ― ns ― 40 ― Typ. ― ― ― ― 0.36 0.28 3.5 280 50 105 20 Max ±10 100 ― 2.0 0.45 0.35 ― ― ― ― ― Unit µA µA V V Ω S pF pF pF
Turn-on time Switching time Fall time
50 Ω
VDD ≈ 50 V VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 µs ― 170 ―
Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge
toff
Qg Qgs Qgd VDD ≈ 80 V, VGS = 10 V, ID = 3 A
― ― ―
13.5 8.5 5
― ― ―
nC nC nC
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MP4411
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics Continuous drain reverse current Pulse drain reverse current Diode forward voltage Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition ― ― IDR = 3 A, VGS = 0 V IDR = 3 A, VGS = 0 V, dIDR/dt = 50 A/µs Min ― ― ― ― ― Typ. ― ― ― 100 0.2 Max 3 12 −1.5 ― ― Unit A A V ns µC
Flyback-Diode Rating and Characteristics (Ta = 25°C)
Characteristics Forward current Reverse current Reverse voltage Forward voltage Symbol IFM IR VR VF VR = 100 V IR = 100 µA IF = 0.5 A Test Condition ― Min ― ― 100 ― Typ. ― ― ― ― Max 3 0.4 ― 1.8 Unit A µA V V
Marking
MP4411
JAPAN
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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MP4411
ID – VDS
2.0 Common source Tc = 25°C 1.6 8 6 4 3 10 8 10 8 6
ID – VDS
Common source Tc = 25°C
(A)
2.8 1.2 2.6 0.8 2.4 0.4 VGS = 2.2 V
(A)
10
ID
ID
4 6
Drain current
Drain current
4
3.5
3 2 VGS = 2.5 V
0 0
0.2
0.4
0.6
0.8
1.0
0 0
2
4
6
8
10
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID – VGS
5 Common source 4 VDS = 10 V 3.2
VDS – VGS
Common source
(V)
Tc = 25°C 2.4
(A)
ID
Drain-source voltage
3
Drain current
VDS
1.6 ID = 5 A 3 0.8 1.5
2 25 1 100 Ta = −55°C
)
0 0
1
2
3
4
5
0 0
0.8 4 8 12 16 20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Yfs| – ID
10 Common source 3 Common source Ta = −55°C 100 25 1
RDS (ON) – ID
Forward transfer admittance |Yfs| (S)
5 3
Drain-source on resistance RDS(ON) (Ω)
VDS = 10 V
Tc = 25°C 1
0.5 0.3
VGS = 4 V
10
0.5 0.3 0.1
0.3
0.5
1
3
5
10
0.1 0.1
0.3
0.5
1
3
5
10
Drain current
ID (A)
Drain current ID (A)
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MP4411
RDS (ON) – Tc
RD.