C4138

www.DataSheet4U.com 2SC4138 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4138 500 400 10 10(Pulse20) 4 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=6A IC=6A, IB=1.2A IC=6A, IB=1.2A VCE=12V, IE=–0.7A VCB=10V, f=1MHz 100max 100max 400min (Ta=25°C) 2SC4138 Unit µA µA 19.9±0.3 4.0 V V MHz pF 10 to 30 0.5max 1.3max 10typ 85typ V a b ø3.2±0.1 20.0min 4.0max 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 33.3 IC (A) 6 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.6 IB2 (A) –1.2 ton (µs) 1max tstg (µs) 3max tf (µs) 0.5max 5.45±0.1 B C E 5.45±0.1 Weight : Approx 2.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 10 1.2 A 1A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (s a t) (V ) 1.4 (I C /I B =5) I C – V BE Temperature Characteristics (Typical) 10 (V C E =4V) 8 Collector Current I C (A) 600 mA 8 1 Collector Current I C (A) 6 400mA 6 mp ) V B E (sat) emp se T –55˚C ) (Cas e Te mp) (Ca ˚C s...