B676

SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220C package ·High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.) ·DARLINGTON APPLICATIONS ·For switching applications ·Hammer drive, pulse motor drive applications ·Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector; connected to mounting base Emitter Product Specification 2SB676 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO VEBO Collector-emitter voltage Emitter-base voltage IC Collector current-DC PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE -100 -80 -5 -4 30 150 -55~150 UNIT V V V A W SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com Product Specification 2SB676 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA, IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-3A ,IB=-6mA -1.5 V VBEsat Base-emitter saturation voltage IC=-3A ,IB=-6mA -2.0 V ICBO Collector cut-off current VCB=-100V, IE=0 -20 µA IEBO hFE-1 Emitter cut-off current DC current gain VEB=-5V; IC=0 IC=-1A ; VCE=-2V 2000 -2.5 mA hFE-2 DC current gain IC=-3A ; VCE=-2V 1000 Switching times ton Turn-on time ts Storage time tf Fall time VCE=-30V, IB1=-IB2=-6mA RL=10@ 0.15 µs 0.80 µs 0.40 µs ...