Document
www.DataSheet4U.com
DBT151-600
Standard Gate Silicon Controlled Rectifiers
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 12 A ) Low On-State Voltage (1.5V(Typ.)@ ITM) Non-isolated Type
1.Cathode
Symbol
2. Anode
BVDRM = 600V IT(RMS) = 12 A
3.Gate
ITSM = 120A
TO-220
General Description
Standard gate triggering thyristor is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system.
1 2 3
Absolute Maximum Ratings
Symbol
VDRM IT(AV) IT(RMS) ITSM I2 t di/dt PGM PG(AV) IFGM VRGM TJ TSTG
( TJ = 25°C unless otherwise specified ) Condition
sine wave,50 to 60Hz,gate open half sine wave : TC =111 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms TC = 111 °C, pulse width TC = 111 °C,pulse width TC = 111 °C, pulse width TC =111 °C, pulse width 1.0 1.0 1.0 1.0
Parameter
Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Critical rate of rise of on-state current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature
Ratings
600 7.6 12 120 72 50 5 0.5 2 5 - 40 ~ 125 - 40 ~ 150
Units
V A A A A2 s A/ W W A V °C °C
June, 2005. Rev.0 copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
1/5
www.DataSheet4U.com
DBT151-600
Electrical Characteristics
Symbol Items
VAK = VDRM TC = 25 °C TC = 125 °C ITM = 23 A VAK = 6 V(DC), RL=10 IGT Gate Trigger Current (2) TC = 25 °C 15 mA tp=380 10 200 1.7 V ( TC = 25 °C unless otherwise noted )
Conditions
Ratings Min. Typ. Max.
Unit
IDRM
Repetitive Peak Off-State Current Peak On-State Voltage (1)
VTM
VD = 6 V(DC), RL=10 VGT Gate Trigger Voltage (2) TC = 25 °C 1.5 V
VGD dv/dt
Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State Voltage
VAK = 12 V, RL=100
TC = 125 °C
0.2 200
V
Linear slope up to VD = VDRM 67% , Gate open TJ = 125°C IT = 100mA, Gate Open
V/
IH
Holding Current
TC = 25 °C
20
mA
Rth(j-c) Rth(j-a)
Thermal Impedance Thermal Impedance
Junction to case Junction to Ambient
1.3 60
°C/W °C/W
Notes : 1. Pulse Width 1.0 ms , Duty cycle 1%
2. RGK Current not Included in measurement.
2/5
www.DataSheet4U.com
DBT151-600
Fig 1. Gate Characteristics Fig 2. Maximum Case Temperature
160
VGM(5V) PGM(5W)
o
10
1
Max. Allowable Case Temperature [ C]
140 120 100 80
θ = 180
o
Gate Voltage [V]
25 C
o
IGM(2A)
10
0
PG(AV)(0.5W)
2
60 40 20 0 0 1 2 3 4 5 6 7 8 9
360° : Conduc t ion Angl e
VGD(0.2V)
10
-1
10
-1
10
0
10
1
10
2
10
3
10
4
Gate Current [mA]
Average On-State Current [A]
Fig 3. Typical Forward Voltage
10
2
Fig 4. Thermal Response
10
1
Transient Thermal Impedance [ C/W]
On-State Current [A]
o
10
0
125 C 10
1
o
25 C
o
10
-1
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
On-State Voltage [V]
Time (sec)
Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature
10
10
Fig 6. Typical Gate Trigger Current vs. Junction Temperature
VGT(25oC)
VGT(toC)
IGT(25 C)
IGT(t C)
o
o
1
1
0.1 -50
0
50
100
o
150
0.1 -50
0
50
100
o
150
Junction Temperature[ C]
Junction Temperature[ C]
3/5
www.DataSheet4U.com
DBT151-600
Fig 7. Typical Holding Current
10
15 θ = 180
o
Fig 8. Power Dissipation
Max. Average Power Dissipation [W]
12 θ = 90 θ = 60 9 θ = 30 6
o o o
θ = 120
o
IH(25 C)
IH(t C)
o
o
1
3
0.1 -50
0
50
100
o
150
0 0 1 2 3 4 5 6 7 8 9
Junction Temperature[ C]
Average On-State Current [A]
4/5
www.DataSheet4U.com
DBT151-600
TO-220 Package Dimension mm Typ. Inch Typ.
Dim. A B C D E F G H I J K L M N O
Min. 9.7 6.3 9.0 12.8 1.2
Max. 10.1 6.7 9.47 13.3 1.4
Min. 0.382 0.248 0.354 0.504 0.047
Max. 0.398 0.264 0.373 0.524 0.055
1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024
0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 0.142
E B
A C1.0
H
I
F
C M
G 1 D 2 3
L
1. Cathode 2. Anode 3. Gate
N O
J K
5/5
.