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DBT151-600 Dataheets PDF



Part Number DBT151-600
Manufacturers DnI
Logo DnI
Description Standard Gate SCR
Datasheet DBT151-600 DatasheetDBT151-600 Datasheet (PDF)

www.DataSheet4U.com DBT151-600 Standard Gate Silicon Controlled Rectifiers Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 12 A ) Low On-State Voltage (1.5V(Typ.)@ ITM) Non-isolated Type 1.Cathode Symbol 2. Anode BVDRM = 600V IT(RMS) = 12 A 3.Gate ITSM = 120A TO-220 General Description Standard gate triggering thyristor is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage prote.

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www.DataSheet4U.com DBT151-600 Standard Gate Silicon Controlled Rectifiers Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 12 A ) Low On-State Voltage (1.5V(Typ.)@ ITM) Non-isolated Type 1.Cathode Symbol 2. Anode BVDRM = 600V IT(RMS) = 12 A 3.Gate ITSM = 120A TO-220 General Description Standard gate triggering thyristor is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(AV) IT(RMS) ITSM I2 t di/dt PGM PG(AV) IFGM VRGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition sine wave,50 to 60Hz,gate open half sine wave : TC =111 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms TC = 111 °C, pulse width TC = 111 °C,pulse width TC = 111 °C, pulse width TC =111 °C, pulse width 1.0 1.0 1.0 1.0 Parameter Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Critical rate of rise of on-state current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature Ratings 600 7.6 12 120 72 50 5 0.5 2 5 - 40 ~ 125 - 40 ~ 150 Units V A A A A2 s A/ W W A V °C °C June, 2005. Rev.0 copyright @ D&I Semiconductor Co., Ltd., All rights reserved. 1/5 www.DataSheet4U.com DBT151-600 Electrical Characteristics Symbol Items VAK = VDRM TC = 25 °C TC = 125 °C ITM = 23 A VAK = 6 V(DC), RL=10 IGT Gate Trigger Current (2) TC = 25 °C 15 mA tp=380 10 200 1.7 V ( TC = 25 °C unless otherwise noted ) Conditions Ratings Min. Typ. Max. Unit IDRM Repetitive Peak Off-State Current Peak On-State Voltage (1) VTM VD = 6 V(DC), RL=10 VGT Gate Trigger Voltage (2) TC = 25 °C 1.5 V VGD dv/dt Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State Voltage VAK = 12 V, RL=100 TC = 125 °C 0.2 200 V Linear slope up to VD = VDRM 67% , Gate open TJ = 125°C IT = 100mA, Gate Open V/ IH Holding Current TC = 25 °C 20 mA Rth(j-c) Rth(j-a) Thermal Impedance Thermal Impedance Junction to case Junction to Ambient 1.3 60 °C/W °C/W Notes : 1. Pulse Width 1.0 ms , Duty cycle 1% 2. RGK Current not Included in measurement. 2/5 www.DataSheet4U.com DBT151-600 Fig 1. Gate Characteristics Fig 2. Maximum Case Temperature 160 VGM(5V) PGM(5W) o 10 1 Max. Allowable Case Temperature [ C] 140 120 100 80 θ = 180 o Gate Voltage [V] 25 C o IGM(2A) 10 0 PG(AV)(0.5W) 2 60 40 20 0 0 1 2 3 4 5 6 7 8 9 360° : Conduc t ion Angl e VGD(0.2V) 10 -1 10 -1 10 0 10 1 10 2 10 3 10 4 Gate Current [mA] Average On-State Current [A] Fig 3. Typical Forward Voltage 10 2 Fig 4. Thermal Response 10 1 Transient Thermal Impedance [ C/W] On-State Current [A] o 10 0 125 C 10 1 o 25 C o 10 -1 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 On-State Voltage [V] Time (sec) Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature 10 10 Fig 6. Typical Gate Trigger Current vs. Junction Temperature VGT(25oC) VGT(toC) IGT(25 C) IGT(t C) o o 1 1 0.1 -50 0 50 100 o 150 0.1 -50 0 50 100 o 150 Junction Temperature[ C] Junction Temperature[ C] 3/5 www.DataSheet4U.com DBT151-600 Fig 7. Typical Holding Current 10 15 θ = 180 o Fig 8. Power Dissipation Max. Average Power Dissipation [W] 12 θ = 90 θ = 60 9 θ = 30 6 o o o θ = 120 o IH(25 C) IH(t C) o o 1 3 0.1 -50 0 50 100 o 150 0 0 1 2 3 4 5 6 7 8 9 Junction Temperature[ C] Average On-State Current [A] 4/5 www.DataSheet4U.com DBT151-600 TO-220 Package Dimension mm Typ. Inch Typ. Dim. A B C D E F G H I J K L M N O Min. 9.7 6.3 9.0 12.8 1.2 Max. 10.1 6.7 9.47 13.3 1.4 Min. 0.382 0.248 0.354 0.504 0.047 Max. 0.398 0.264 0.373 0.524 0.055 1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024 0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 0.142 E B A C1.0 H I F C M G 1 D 2 3 L 1. Cathode 2. Anode 3. Gate N O J K 5/5 .


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