DBT152F-600

www.DataSheet4U.com DBT152F-600 Standard Gate Silicon Controlled Rectifiers Features 3.Gate Symbol 2. Anode BVDRM = 600V IT(RMS) = 20 A ITSM = 220 A Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 20 A ) Low On-State Voltage (1.5V(Typ.)@ ITM) Isolation Voltage ( VISO = 2500V AC ) 1.Cathode TO-220F General Description Standard gate triggering thyristor is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(AV) IT(RMS) ITSM I2 t di/dt PGM PG(AV) IFGM VRGM VISO TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition sine wave,50 to 60Hz,gate open half sine wave : TC = 62 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms Parameter Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Critical rate of rise of on-state current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Isolation Breakdown Voltage(R.M.S.) Operating Junction Temperature Storage Temperature Ratings 600 12.7 20 220 242 50 Units V A A A A2 s A/ W W A V V °C °C TC = 62 °C, pulse width TC = 62 °C,pulse width TC = 62 °C, pulse width TC = 62 °C, pulse width A.C. ...