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DFB30N06
N-Channel MOSFET
Features
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Low RDS(on) (0. 04Ω )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range
2. Drain
BVDSS = 60V
1. Gate 3. Source
RDS(ON) = 0. 04 ohm ID = 30A
General Description
This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics.
TO-263 (D2-Pak)
2
1
3
Absolute Maximum...