DFB70N06

www.DataSheet4U.com DFB70N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ ■ Low RDS(on) (0.014Ω )@VGS=10V Low Gate Charge (Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.014 ohm ID = 70A General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics. TO-263 (D2-Pak) 2 1 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 3) (Note 1) Parameter Value 60 70 51 280 ±25 800 7.0 158 1.05 - 55 ~ 175 300 Units V A A A V mJ V/ns W W/°C °C °C Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Value Min. - Typ. 0.5 - Max. 0.95 62.5 Un...