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DFP640
N-Channel MOSFET
Features
RDS(on) (Max 0. 18 )@VGS=10V Gate Charge (Typical 44nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested
2. Drain
BVDSS = 200V
1. Gate
RDS(ON) = 0. 18 ohm ID = 18A
3. Source
General Description
This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics. The TO-220 pkg is well suited for DC-DC converter and SCorrection in color-monitor system.
TO-220
1 2
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS ...