DFP634

www.DataSheet4U.com DFP634 N-Channel MOSFET Features RDS(on) (Max 0.45 )@VGS=10V Gate Charge (Typical 26nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 250V 1.Gate RDS(ON) = 0.45 ohm ID = 8.1A 3.Source General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics. The TO-220 pkg is well suited for DC-DC converter in colormonitor system. TO-220 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 250 8.1 5.1 32 Units V A A A V mJ mJ V/ns W W/°C °C °C ±30 300 7.4 4.8 74 0.78 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Value Min. - Typ. 0.5 - Max. 1.7 62.5 Unit...