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DFP830
N-Channel MOSFET
Features
RDS(on) (Max 1. 5 )@VGS=10V
1. Gate 2. Drain
Gate Charge (Typical 32nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested
BVDSS = 500V RDS(ON) = 1. 5 ohm ID = 4. 5A
3. Source
General Description
This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220 pkg is well suited for half bridge and full bridge resonant topolgy like a electronic ballast .
TO-220
1 2
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS ...