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DFF4N60
N-Channel MOSFET
Description
www.DataSheet4U.com DFF4N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 2.5 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 600V RDS(ON) = 2.5 ohm ID = 4A 3. Source Gate Charge (Typical 25nC) Improved dv/dt Capability 100% Avalanche Tested General Description This N-channel enhancement mode field-effect power
transistor
using D& I s...
DnI
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DFF4N60
N-Channel MOSFET
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