M58LT128HSB

www.DataSheet4U.com M58LT128HST M58LT128HSB 128-Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program Synchronous / Asynchronous Read – Synchronous Burst Read mode: 52 MHz – Asynchronous Page Read mode – Random Access: 85 ns Synchronous Burst Read Suspend Programming time – 2.5 µs typical Word program time using Buffer Enhanced Factory Program command Memory organization – Multiple Bank memory array: 8-Mbit Banks – Parameter Blocks (top or bottom location) Dual operations – program/erase in one Bank while read in others – No delay between read and write operations Block protection – All blocks protected at power-up – Any combination of blocks can be protected with zero latency – Absolute Write Protection with VPP = VSS Security – Software security features – 64-bit unique device number – 2112-bit user programmable OTP Cells Common Flash Interface (CFI) 100 000 program/erase cycles per block ■ ■ BGA ■ TBGA64 (ZA) 10 × 13 mm ■ ■ ■ Electronic signature – Manufacturer code: 20h – Top device codes: M58LT128HST: 88D6h – Bottom device codes M58LT128HSB: 88D7h TBGA64 package – ECOPACK® compliant ■ ■ ■ ■ ■ March 2007 Rev 1 1/110 www.st.com 1 www.DataSheet4U.com Contents M58LT128HST, M58LT128HSB Contents 1 2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....