D667C

www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SD667,2SD667A TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE TRANSISTOR (NPN) FEATURES z Low frequency power amplifier z Complementary pair with 2SB647/A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature 2SD667 2SD667A VEBO IC PC TJ Tstg Value 120 80 100 5 1 900 150 -55-150 Units V V V A mW ℃ ℃ 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance CLASSIFICATION OF Rank 2SD667 Range 2SD667A 60-120 100-200 hFE(1) B 60-120 C 100-200 D 160-320 VCE(sat) VBE fT Cob VCE=5V,IC=500mA IC=500mA,IB=50mA VCE=5V,IC=150mA VCE=5V,IC=150mA VCB=10V,IE=0,f=1MHz 140 12 Test conditions MIN 120 2SD667 2SD667A 80 100 5 10 10 2SD667 2SD667A 60 60 30 1 1.5 V V MHz pF 320 200 TYP MAX UNIT V V V V μA μA IC=10μA,IE=0 IC=1mA,IB=0 IE=10μA,IC=0 VCB=100V,IE=0 VEB=4V,IC=0 VCE=5V,IC=150mA www.DataSheet4U.com Typical Characteristics 2SD667,667A www.Dat...