MRF2628

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF2628/D The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 volt VHF large–signal power amplifiers in commercial and industrial FM equipment. Compact .280 Stud Package Specified 12.5 V, 175 MHz Performance Output Power = 15 Watts Power Gain = 12 dB Min Efficiency = 60% Min Characterized to 220 MHz Load Mismatch Capability at High Line and Overdrive MRF2628 15 W 136 – 220 MHz RF POWER TRANSISTOR NPN SILICON CASE 244–04, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 18 36 4.0 2.5 40 0.23 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 4.0 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 25 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO ICBO 18 36 4.0 — — — — — — — — 1.0 Vdc Vdc Vdc mAdc (continued) REV 6 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1994 MRF2628 1 ...