DF2S5.6S

www.DataSheet4U.com DF2S5.6S TOSHIBA Diodes for Protecting against ESD DF2S5.6S Product for Use Only as Protection against Electrostatic Discharge (ESD). *This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 150* 150 −55~150 Unit mW °C °C CATHODE MARK z 2terminal ultra small package suitable for mounting on small space. *: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm. JEDEC JEITA TOSHIBA ― ― 1-1K1A Electrical Characteristics (Ta = 25°C) Characteristic Zener voltage Dynamic impedance Reverse current Total capacitance Symbol VZ ZZ IR CT Test Condition IZ = 5 mA IZ = 5 mA VR = 3.5 V VR = 0 V, f = 1 MHz Weight: 0.0011 g (typ.) Min 5.3 ― ― ― Typ. 5.6 ― ― 40 Max 6.0 30 1 ― Unit V Ω μA pF Guaranteed Level of ESD Immunity Test Condition IEC61000-4-2 (contact discharge) ESD Immunity Level Marking 6. Equivalent Circuit (Top View) ±30 kV Criterion: No damage to device elements 1 2007-08-20 www.DataSheet4U.com DF2S5.6S CT - VR IZ - VZ 100 f = 1MHz Ta = 25°C Ta = 25°C ZENER CURRENT IZ (mA) 10 100 TOTAL CAPACITANCE CT(pF) 10 1 0 0.1 1 0 1 2 3 4 5 6 0.01 0 0 1 2 3 4 5 6 7 8 9 10 REVERSE VOLTAGE VR(V) ZENER VOLTAGE VZ (V) 2 2007-08-20 www.DataSheet...